PHP212L 查看數據表（PDF） - Philips Electronics
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PHP212L Datasheet PDF : 8 Pages
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Philips Semiconductors
Dual P-channel enhancement
mode MOS transistor
Objective specification
PHP212L
FEATURES
• High-speed switching
• No secondary breakdown
• Very low on-state resistance
• Low threshold.
APPLICATIONS
• Motor and actuator driver
• Power management
• Synchronized rectification.
PINNING - SOT96-1 (SO8)
PIN
SYMBOL
1
s1
2
g1
3
s2
4
g2
5
d2
6
d2
7
d1
8
d1
DESCRIPTION
source 1
gate 1
source 2
gate 2
drain 2
drain 2
drain 1
drain 1
DESCRIPTION
Two P-channel enhancement mode MOS transistors in an
8-pin plastic SOT96-1 (SO8) package.
handbook, halfpage
8
5
d1 d1
d2 d2
CAUTION
The device is supplied in an antistatic package.
The gate-source input must be protected against static
discharge during transport or handling.
1
4
MAM119
s1
g1
s2
g2
Fig.1 Simplified outline and symbol.
QUICK REFERENCE DATA
SYMBOL
VDS
VSD
VGS
VGSth
ID
RDSon
Ptot
PARAMETER
drain-source voltage (DC)
source-drain diode forward voltage
gate-source voltage (DC)
gate-source threshold voltage
drain current (DC)
drain-source on-state resistance
total power dissipation
CONDITIONS
IS = −1.25 A
ID = −1 mA; VDS = VGS
Ts = 80 °C
ID = −2 A; VGS = −4.5 V
Ts = 80 °C
MIN.
−
−
−
−0.5
−
−
−
MAX.
−30
−1.3
±12
−1.1
−4
0.12
3.5
UNIT
V
V
V
V
A
Ω
W
1997 Jun 20
2
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