IRFB59N10DPBF 查看數據表（PDF） - Unspecified

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IRFB59N10DPBF

N-Channel 100-V (D-S) MOSFET

Unspecified 

IRFB59N10DPBF

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

3.0

100

VGS = 10 V

2.5

ID = 30 A

www.VBsemi.tw

2.0

TJ = 150 °C

TJ = 25 °C

1.5

10

1.0

0.5

0.0

- 50 - 25 0

25 50 75 100 125 150 175

TJ - Junction Temperature (°C)

On-Resistance vs. Junction Temperature

1000

1

0

0.3

0.6

0.9

1.2

VSD - Source-to-Drain Voltage (V)

Source-Drain Diode Forward Voltage

240

100

IAV (A) at TA = 25 °C

10

230

ID = 1.0 mA

220

210

1

IAV (A) at TA = 150 °C

0.1

0.00001 0.0001 0.001 0.01

0.1

1

tin (s)

Avalanche Current vs. Time

200

190

180

- 50 - 25 0

25 50 75 100 125 150 175

TJ - Junction Temperature (°C)

Drain Source Breakdown

vs. Junction Temperature

E-mail：China@VBsemi TEL:86-755-83251052

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