IRF1324STRL-7PP 查看數據表（PDF） - Infineon Technologies

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IRF1324STRL-7PP

HEXFET® Power MOSFET

Infineon Technologies 

IRF1324S-7PPbF

Static @ TJ = 25°C (unless otherwise specified)

Parameter

Min. Typ. Max. Units

Conditions

V(BR)DSS

Drain-to-Source Breakdown Voltage

V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient

RDS(on)

Static Drain-to-Source On-Resistance

24 ––– ––– V VGS = 0V, ID = 250µA

––– 0.023 ––– V/°C Reference to 25°C, ID = 5mA 

––– 0.80 1.0 m VGS = 10V, ID = 160A 

VGS(th)

IDSS

IGSS

RG

Gate Threshold Voltage

Drain-to-Source Leakage Current

Gate-to-Source Forward Leakage

Gate-to-Source Reverse Leakage

Gate Resistance

2.0 ––– 4.0 V VDS = VGS, ID = 250µA

–––

–––

–––

–––

20

250

µA

VDS =24V, VGS = 0V

VDS =19V,VGS = 0V,TJ =125°C

–––

–––

––– 200

––– -200

nA

VGS = 20V

VGS = -20V

––– 3.0 ––– 

Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

gfs

Qg

Qgs

Qgd

Qsync

td(on)

tr

td(off)

tf

Ciss

Coss

Crss

Forward Trans conductance

Total Gate Charge

Gate-to-Source Charge

Gate-to-Drain Charge

Total Gate Charge Sync. (Qg - Qgd)

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

190 ––– ––– S VDS = 15V, ID = 160A

––– 180 252

ID = 75A

––– 47 –––

VDS = 12V

––– 58 ––– nC VGS = 10V

––– 122 –––

––– 19 –––

––– 240 –––

––– 86 –––

––– 93 –––

––– 7700 –––

––– 3380 –––

VDD = 16V

ns

ID = 160A

RG= 2.7

VGS = 10V

VGS = 0V

VDS = 19V

––– 1930 ––– pF ƒ = 1.0MHz, See Fig. 5

Coss eff.(ER)

Effective Output Capacitance (Energy Related) ––– 4780 –––

VGS = 0V, VDS = 0V to 19V

Coss eff.(TR)

Effective Output Capacitance (Time Related)

––– 4970 –––

VGS = 0V, VDS = 0V to 19V

Diode Characteristics

Parameter

IS

Continuous Source Current

(Body Diode)

ISM

Pulsed Source Current

(Body Diode)

VSD

Diode Forward Voltage

trr

Reverse Recovery Time

Qrr

Reverse Recovery Charge

IRRM

Reverse Recovery Current

ton

Forward Turn-On Time

Min. Typ. Max. Units

Conditions

–––

–––

––– 429

––– 1640

A

MOSFET symbol

showing the

integral reverse

p-n junction diode.

––– ––– 1.3

––– 71 107

––– 74 110

V TJ = 25°C,IS = 160A,VGS = 0V 

ns

TJ = 25°C

TJ = 125°C

VDD = 20V

IF = 160A,

–––

–––

83

92

120

140

nC

TJ = 25°C

TJ = 125°C

di/dt = 100A/µs 

––– 2.0 ––– A TJ = 25°C 

Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Notes:

 Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 240A. Note that

current limitations arising from heating of the device leads may occur with some lead mounting arrangements. (Refer to AN-1140)

 Repetitive rating; pulse width limited by max. junction temperature.

 Limited by TJmax, starting TJ = 25°C, L = 0.018mH, RG = 25, IAS = 160A, VGS =10V. Part not recommended for use above

this value.

 ISD 160A, di/dt 600A/µs, VDD V(BR)DSS, TJ  175°C.

 Pulse width 400µs; duty cycle  2%.

 Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.

 Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS.

 When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to

application note #AN-994

 R is measured at TJ approximately 90°C.

2

2015-10-15

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