STTH602CSF 查看數據表（PDF） - STMicroelectronics
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STTH602CSF Datasheet PDF : 10 Pages
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STTH602CSF
Characteristics
1
Characteristics
Table 1. Absolute ratings (limiting values per diode at 25 °C, unless otherwise specified)
Symbol
VRRM
IF(AV)
IFSM
Tstg
Tj
Parameter
Repetitive peak reverse voltage
Average forward current, δ = 0.5
Per diode
Per device
Surge non repetitive forward current
Storage temperature range
Maximum operating junction temperature range
Tc = 155 °C
Tc = 155 °C
tp = 10 ms sinusoidal
Value
Unit
200
V
3
A
6
55
A
-65 to +175
°C
+175
°C
Table 2. Thermal resistance parameters
Symbol
Rth(j-c)
Junction to case
Parameter
Total
Typ.
2.14
Unit
°C/W
For more information, please refer to the following application note:
• AN5088: Rectifiers thermal management, handling and mounting recommendations
Table 3. Static electrical characteristics (per diode)
Symbol
Parameter
IR(1)
Reverse leakage current
VF(2)
Forward voltage drop
1. Pulse test: tp = 5 ms, δ < 2%
2. Pulse test: tp = 380 µs, δ < 2%
Test conditions
Tj = 25 °C
Tj = 125 °C
VR = VRRM
Tj = 25 °C
Tj = 125 °C
IF = 3 A
Tj = 25 °C
Tj = 125 °C
IF = 6 A
Min. Typ. Max. Unit
-
4
µA
-
3
30
-
0.92 1.06
-
0.80 0.92
V
-
1.02 1.17
-
0.90 1.04
To evaluate the conduction losses, use the following equation:
P = 0.80 x IF(AV) + 0.040 x IF2(RMS)
For more information, please refer to the following application notes related to the power losses:
• AN604: Calculation of conduction losses in a power rectifier
• AN4021: Calculation of reverse losses in a power diode
DS13550 - Rev 1
page 2/10
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