STTH602CSF 查看數據表（PDF） - STMicroelectronics
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STTH602CSF Datasheet PDF : 10 Pages
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STTH602CSF
Characteristics (curves)
1.1
Characteristics (curves)
Figure 1. Conduction losses versus average forward
current (per diode)
PF(AV)(W)
4
3
= 0.05
= 0.1 = 0.2
= 0. = 1
2
T
1
IF(AV)(A)
=tp/T
tp
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
Figure 2. Forward voltage drop versus forward current
(typical values, per diode)
IF(A)
1.0E+02
1.0E+01
1.0E+00
T j = 150 °C
T j = 125 °C
T j = 25 °C
1.0E-01
1.0E-02
VF(V)
0.5
1.0
1.5
2.0
Figure 3. Forward voltage drop versus forward current Figure 4. Relative variation of thermal impedance junction
(maximum values, per diode)
to case total versus pulse duration
IF(A)
1.0E+02
1.0E+01
1.0E+00
T j = 150 °C
T j = 125 °C
T j = 25 °C
1.0E-01
1.0E-02
VF(V)
0.0
0.5
1.0
1.5
2.0
2.5
Z / R th(j-c)
th(j-c)
1.0
0.9
PSMC (TO-277A)
0.8
0.7
0.6
0.5
0.4
0.3
0.2 Single pulse
0.1
0.0
1.E-04
1.E-03
1.E-02
1.E-01
tp(s)
1.E+00
Figure 5. Peak reverse recovery current versus dIF/dt
(typical values, per diode)
IRM(A)
10
VR = 160 V
Tj = 125 °C
8
IF = IF(AV)
6
4
2
dIF/dt(A/µs)
0
0
100
200
300
400
500
Figure 6. Reverse recovery time versus dIF/dt (typical
values, per diode)
trr (ns)
60
50
40
VR = 160 V
Tj = 125 °C
IF = IF(AV)
30
20
10
0
0
dIF/dt(A/µs)
100
200
300
400
500
DS13550 - Rev 1
page 4/10
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