PMBFJ308 查看數據表（PDF） - Philips Electronics
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PMBFJ308 Datasheet PDF : 12 Pages
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Philips Semiconductors
N-channel silicon field-effect transistors
Product specification
PMBFJ308; PMBFJ309;
PMBFJ310
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
VDS
VGSO
VGDO
IG
Ptot
Tstg
Tj
drain-source voltage
gate-source voltage
gate-drain voltage
forward gate current (DC)
total power dissipation
storage temperature
operating junction temperature
open drain
open source
up to Tamb = 25 °C
MIN.
−
−
−
−
−
−65
−
MAX.
±25
−25
−25
50
250
150
150
UNIT
V
V
V
mA
mW
°C
°C
400
handbook, halfpage
Ptot
(mW)
300
MBB688
200
100
0
0
50
100
150
200
Tamb (°C)
Fig.2 Power derating curve.
1996 Sep 11
3
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