PMBFJ308 查看數據表（PDF） - Philips Electronics
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PMBFJ308 Datasheet PDF : 12 Pages
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Philips Semiconductors
N-channel silicon field-effect transistors
Product specification
PMBFJ308; PMBFJ309;
PMBFJ310
DYNAMIC CHARACTERISTICS
Tj = 25 °C; unless otherwise specified.
SYMBOL
PARAMETER
Cis
input capacitance
Crs
reverse transfer capacitance
gis
common source input
conductance
gfs
common source transfer
conductance
grs
common source reverse
conductance
gos
common source output
conductance
Vn
equivalent input noise voltage
CONDITIONS
VDS = 10 V; VGS = −10 V; f = 1 MHz
VDS = 10 V; VGS = 0; Tamb = 25 °C
VDS = 0; VGS = −10 V; f = 1 MHz
VDS = 10 V; ID = 10 mA; f = 100 MHz
VDS = 10 V; ID = 10 mA; f = 450 MHz
VDS = 10 V; ID = 10 mA; f = 100 MHz
VDS = 10 V; ID = 10 mA; f = 450 MHz
VDS = 10 V; ID = 10 mA; f = 100 MHz
VDS = 10 V; ID = 10 mA; f = 450 MHz
VDS = 10 V; ID = 10 mA; f = 100 MHz
VDS = 10 V; ID = 10 mA; f = 450 MHz
VDS = 10 V; ID = 10 mA; f = 100 Hz
TYP.
3
6
1.3
200
3
13
12
−30
−450
150
400
6
MAX.
5
−
2.5
−
−
−
−
−
−
−
−
−
UNIT
pF
pF
pF
µS
mS
mS
mS
µS
µS
µS
µS
nV/√Hz
handbook,5h0alfpage
IDSS
(mA)
40
MCD220
30
20
10
0
0
−1
−2
−3
−4
VGSoff (V)
VDS = 10 V; Tj = 25 °C.
Fig.3 Drain current as a function of gate-source
cut-off voltage; typical values.
handbook,2h0alfpage
yfs
(mS)
16
MCD219
12
8
4
0
0
−2
−4
−6
−8
VGSoff (V)
VDS = 10 V; ID = 10 mA; Tj = 25 °C.
Fig.4 Forward transfer admittance as a function
of gate-source cut-off voltage; typical
values.
1996 Sep 11
5
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