PMBFJ308 查看數據表（PDF） - Philips Electronics
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PMBFJ308 Datasheet PDF : 12 Pages
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Philips Semiconductors
N-channel silicon field-effect transistors
Product specification
PMBFJ308; PMBFJ309;
PMBFJ310
handboo1k,5h0alfpage
gos
(µS)
100
MCD221
50
0
0
−1
−2
−3
−4
VGSoff (V)
VDS = 10 V; ID = 10 mA; Tj = 25 °C.
Fig.5 Common-source output conductance as a
function of gate-source cut-off voltage;
typical values.
80
handbook, halfpage
RDSon
(Ω)
60
MCD222
40
20
0
0
−1
−2
−3
−4
VGSoff (V)
VDS = 100 mV; VGS = 0; Tj = 25 °C.
Fig.6 Drain-source on-state resistance as a
function of gate-source cut-off voltage;
typical values.
16
handbook, halfpage
ID
(mA)
12
8
4
0
0
4
MCD216
VGS = 0 V
−0.25 V
−0.5 V
−0.75 V
−1 V
8
12
16
VDS (V)
handbook,1h6alfpage
ID
(mA)
12
MCD213
8
4
0
−2
−1.5
−1
−0.5
0
VGS (V)
Tj = 25 °C.
Fig.7 Typical output characteristics; PMBFJ308.
VDS = 10 V; Tj = 25 °C.
Fig.8 Typical transfer characteristics; PMBFJ308.
1996 Sep 11
6
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