PMBFJ308 查看數據表（PDF） - Philips Electronics
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PMBFJ308 Datasheet PDF : 12 Pages
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Philips Semiconductors
N-channel silicon field-effect transistors
Product specification
PMBFJ308; PMBFJ309;
PMBFJ310
−104
handbook, full pagewidth
IG
(pA)
−103
−102
−10
ID = 10 mA
MCD230
1 mA
100 µA
−1
−10−1
0
Tj = 25 °C.
IGSS
2
4
6
8
10
12
14
16
VDG (V)
Fig.16 Gate current as a function of drain-gate voltage; typical values.
104
handbook, full pagewidth
IGSS
(pA)
103
102
MCD231
10
1
10−1
−25
1996 Sep 11
0
25
50
75
100
125
150 Tj (oC) 175
Fig.17 Gate current as a function of junction temperature; typical values.
9
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