SI3586DV-T1-E3 查看數據表（PDF） - VBsemi Electronics Co.,Ltd
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SI3586DV-T1-E3 Datasheet PDF : 10 Pages
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SI3586DV-T1-E3
N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
10
0.10
0.08
ID = 2 A
TJ = 150 °C
1
TJ = 25 °C
0.06
0.04
0.02
ID = 2.5 A
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0.1
0
0.2
0.4
0.6
0.8
1.0
1.2
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.4
ID = 250 µA
0.2
0.0
- 0.2
- 0.4
- 0.6
- 0.8
- 50 - 25
0 25 50 75 100 125 150
TJ - Temperature (°C)
Threshold Voltage
0.00
0
2
4
6
8
10
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
8
6
4
2
0
0.01
0.1
1
10 30
Time (s)
Single Pulse Power (Junction-to-Ambient)
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
10 - 4
Single Pulse
10 - 3
Notes:
PDM
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 130 °C/W
3. TJM - TA = PDMZthJA(t)
4. Surface Mounted
10 - 2
10 - 1
1
10
100
600
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
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