SI3586DV-T1-E3 查看數據表（PDF） - VBsemi Electronics Co.,Ltd
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SI3586DV-T1-E3 Datasheet PDF : 10 Pages
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SI3586DV-T1-E3
P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.VBsemi.tw
10
VDS = 15 V
ID = 1.8 A
8
6
1.8
VGS = 10 V
1.6
ID = 1.8 A
1.4
1.2
4
1.0
0.8
2
0.6
0
0
1
2
3
4
5
Qg - Total Gate Charge (nC)
Gate Charge
10
TJ = 150 °C
1
0.4
- 50 - 25 0
5 50 75 100 125 150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
0.2
0.1
0.09
ID = 1 A
ID = 1.8 A
0.08
TJ = 25 °C
0.07
0.06
0.1
0.00
0.3
0.6
0.9
1.2
1.5
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.6
0.0
0
2
4
6
8
10
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
8
0.4
6
0.2
ID = 250 µA
4
0.0
2
- 0.2
- 0.4
- 50 - 25
0 25 50 75 100 125 150
TJ - Temperature (°C)
Threshold Voltage
0
0.01
0.1
1
10 30
Time (s)
Single Pulse Power (Junction-to-Ambient)
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