SI4431CDY-T1-E3 查看數據表（PDF） - VBsemi Electronics Co.,Ltd
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SI4431CDY-T1-E3 Datasheet PDF : 9 Pages
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SI4431CDY-T1-E3
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
0.05
0.04
10
0.03
www.VBsemi.tw
ID = 7 A
TJ = 125 °C
TJ = 150 °C
TJ = 25 °C
1
0.02
0.01
TJ = 25 °C
0.1
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
2.1
0.00
0
4
8
12
16
20
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
50
1.9
40
1.7
30
ID = 250 µA
1.5
20
1.3
10
1.1
- 50 - 25
0 25 50 75 100 125 150
TJ - Temperature (°C)
Threshold Voltage
100
Limited by RDS(on)*
0
0.001
0.01
0.1
1
10
100
Time (s)
Single Pulse Power, Junction-to-Ambient
10
1 ms
1
10 ms
100 ms
0.1
TA = 25 °C
Single Pulse
1s
10 s
BVDSS DC
Limited
0.01
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area
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