AO4405 查看數據表（PDF） - VBsemi Electronics Co.,Ltd
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AO4405 Datasheet PDF : 8 Pages
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AO4405
P-Channel 30-V (D-S) MOSFET
www.VBsemi.tw
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.042 at VGS = - 10 V
- 30
0.055 at VGS = - 6 V
0.060 at VGS = - 4.5 V
ID (A)
- 5.8
- 5.0
- 4.4
SO-8
S1
S2
S3
G4
8D
7D
6D
5D
Top View
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• Compliant to RoHS Directive 2002/95/EC
S
G
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
10 s
Steady State
Unit
Drain-Source Voltage
Gate-Source Voltage
VDS
- 30
V
VGS
± 20
Continuous Drain Current (TJ = 150 °C)a
Pulsed Drain Current
TA = 25 °C
TA = 70 °C
ID
- 5.8
- 4.6
- 4.1
- 3.2
A
IDM
- 30
Continuous Source Current (Diode Conduction)a
IS
- 2.3
- 1.1
Maximum Power Dissipationa
TA = 25 °C
TA = 70 °C
PD
2.5
1.6
1.3
0.8
W
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain)
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
t ≤ 10 s
Steady State
Steady State
Symbol
RthJA
RthJF
Typical
40
70
24
Maximum
50
95
30
Unit
°C/W
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