DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

NE350184C-T1A-A 查看數據表(PDF) - California Eastern Laboratories.

零件编号
产品描述 (功能)
生产厂家
NE350184C-T1A-A
CEL
California Eastern Laboratories. CEL
NE350184C-T1A-A Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
NE350184C
TYPICAL CHARACTERISTICS (TA = +25°C)
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
250
Mounted on Glass Epoxy PCB
(1.08 cm2 × 1.0 mm (t) )
200
150
100
50
0
50
100
150
200
250
Ambient Temperature TA (˚C)
DRAIN CURRENT vs.
GATE TO SOURCE VOLTAGE
80
VDS = 2 V
60
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
100
80
60
40
VGS = 0 V
–0.2 V
20
–0.4 V
–0.6 V
0
1.0
2.0
Drain to Source Voltage VDS (V)
40
20
0
–2.0
–1.0
0
Gate to Source Voltage VGS (V)
MINIMUM NOISE FIGURE,
ASSOCIATED GAIN vs. FREQUENCY
2.0
25
1.8
VDS = 2 V
ID = 10 mA
1.6
20
1.4
1.2
15
Ga
1.0
0.8
10
0.6
NFmin
0.4
5
0.2
0.0
0
0
5
10 15 20 25 30
Frequency f (GHz)
Remark The graphs indicate nominal characteristics.
MINIMUM NOISE FIGURE,
ASSOCIATED GAIN vs. DRAIN CURRENT
2.0
20
1.8
f = 20 GHz
VDS = 2 V
18
1.6
16
Ga
1.4
14
1.2
12
1.0
10
0.8
8
0.6
NFmin
6
0.4
4
0.2
2
0.0
0
0
5
10 15 20 25 30
Drain Current ID (mA)
Data Sheet PG10584EJ01V0S
3

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]