BF510 查看數據表（PDF） - Philips Electronics
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BF510 Datasheet PDF : 7 Pages
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Philips Semiconductors
N-channel silicon field-effect transistors
Product specification
BF510 to 513
DYNAMIC CHARACTERISTICS
Measuring conditions (common source):
y-parameters (common source)
Input capacitance at f = 1 MHz
Input conductance at f = 100 MHz
Feedback capacitance at f = 1 MHz
Transfer admittance at f = 1 kHz
VGS = 0 instead of ID = 5 mA
Transfer admittance at f = 100 MHz
Output capacitance at f = 1 MHz
Output conductance at f = 1 MHz
Output conductance at f = 100 MHz
Noise figure at optimum source admittance
GS = 1 mS; −BS = 3 mS;
f = 100 MHz
VDS = 10 V; VGS = 0; Tamb = 25 °C for BF510 and BF511
VDS = 10 V; ID = 5 mA; Tamb = 25 °C for BF512 and BF513
BF510
511
512
513
Cis
<
5
5
5
5 pF
gis
typ.
100
90
60
50 µS
typ.
Crs
<
0.4
0.4
0.4
0.4 pF
0.5
0.5
0.5
0.5 pF
yfs >
yfs >
yfs typ.
2.5
4.0
4.0
3.5 mS
−
−
6.0
7.0 mS
3.5
5.5
5.0
5.0 mS
Cos
<
gos
<
gos
typ.
3
3
3
3 pF
60
80
100
120 µS
35
55
70
90 µS
F
typ.
1.5
1.5
1.5
1.5 dB
1.5
handbook, halfpage
Crs
(pF)
1
MDA275
0.5
typ
0
0
4
8
12
16
20
VDS (V)
Fig.2 VGS = 0 for BF510 and BF511;
ID = 5 mA for BF512 and BF513;
f = 1 MHz; Tamb = 25 °C.
December 1997
10
handbook, halfpage
|yfs|
(mS)
8
6
BF510
4
BF512
BF511
MDA276
BF513
2
0
0
5
10 ID (mA) 15
Fig.3 VDS = 10 V; f = 1 kHz; Tamb = 25 °C; typical
values.
4
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