BF556A 查看數據表（PDF） - Philips Electronics
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BF556A Datasheet PDF : 11 Pages
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Philips Semiconductors
N-channel silicon junction
field-effect transistors
Product specification
BF556A; BF556B; BF556C
DYNAMIC CHARACTERISTICS
Tamb = 25 °C; unless otherwise specified.
SYMBOL
PARAMETER
Cis
input capacitance
Crs
reverse transfer capacitance
gis
common source input conductance
gfs
common source transfer conductance
grs
common source reverse conductance
gos
common source output conductance
Vn
equivalent input noise voltage
CONDITIONS
VDS = 15 V; VGS = −10 V; f = 1 MHz
VDS = 15 V; VGS = 0; f = 1 MHz
VDS = 15 V; VGS = −10 V; f = 1 MHz
VDS = 15 V; VGS = 0; f = 1 MHz
VDS = 10 V; ID = 1 mA; f = 100 MHz
VDS = 10 V; ID = 1 mA; f = 450 MHz
VDS = 10 V; ID = 1 mA; f = 100 MHz
VDS = 10 V; ID = 1 mA; f = 450 MHz
VDS = 10 V; ID = 1 mA; f = 100 MHz
VDS = 10 V; ID = 1 mA; f = 450 MHz
VDS = 10 V; ID = 1 mA; f = 100 MHz
VDS = 10 V; ID = 1 mA; f = 450 MHz
VDS = 10 V; ID = 1 mA; f = 100 Hz
TYP.
1.7
3
0.8
0.9
15
300
2
1.8
−6
−40
30
60
40
UNIT
pF
pF
pF
pF
µS
µS
mS
mS
µS
µS
µS
µS
nV/√Hz
handbook, 2h0alfpage
IDSS
(mA)
16
MRC154
12
8
4
0
0
1
2
3
4
5
6
7
VGSoff (V)
VDS = 15 V.
Fig.2 Drain current as a function of gate-source
cut-off voltage; typical values.
handbook, 1h0alfpage
Yfs
(mS)
8
MRC156
6
4
2
0
0
1
2
3
4
5
6
7
VGSoff (V)
VDS = 15 V; ID = 1 µA.
Fig.3 Forward transfer admittance as a function
of gate-source cut-off voltage; typical
values.
1996 Jul 29
4
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