BF556A 查看數據表（PDF） - Philips Electronics
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BF556A Datasheet PDF : 11 Pages
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Philips Semiconductors
N-channel silicon junction
field-effect transistors
Product specification
BF556A; BF556B; BF556C
100
handbGooosk, halfpage
(µS)
80
MRC153
60
40
20
0
0
−2
−4
−6
−8
VGSoff (V)
VDS = 15 V.
Fig.4 Common-source output conductance as a
function of gate-source cut-off voltage;
typical values.
300
handbook, halfpage
RDSon
(Ω)
200
MRC155
100
0
0
2
4
6
8
VGSoff (V)
VDS = 100 mV; VGS = 0.
Fig.5 Drain-source on-state resistance as a
function of gate-source cut-off voltage;
typical values.
5
handboIoDk, halfpage
(mA)
4
3
2
1
0
0
4
MRC145
VGS = 0 V
−0.5 V
−1 V
8
12
16
VDS (V)
handbook,1h6alfpage
ID
(mA)
12
8
4
0
0
4
MRC146
VGS = 0 V
−0.5 V
−1.0 V
−1.5 V
−2.0 V
−2.5 V
8
12
16
VDS (V)
Fig.6 Typical output characteristics; BF556A.
Fig.7 Typical output characteristics; BF556B.
1996 Jul 29
5
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