BF556A 查看數據表（PDF） - Philips Electronics
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BF556A Datasheet PDF : 11 Pages
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Philips Semiconductors
N-channel silicon junction
field-effect transistors
Product specification
BF556A; BF556B; BF556C
25
handboIoDk, halfpage
(mA)
20
15
10
5
0
0
4
MRC147
VGS = 0 V
−1 V
−2 V
−3 V
−4 V
−5 V
8
12
16
VDS (V)
Fig.8 Typical output characteristics; BF556C.
30
handbook, halfpage
ID
(mA)
20
10
0
−6
−4
MRC148
BF556C
BF556B
BF556A
−2
0
VGS (V)
VDS = 15 V.
Fig.9 Typical input characteristics.
handbIoDok1, 0ha3lfpage
(µA)
102
10
1
10−1
10−2
10−3
−8
MRC149
BF556C BF556B
BF556A
−6
−4
−2
0
VGS (V)
−102
handbook, halfpage
IG
(pA)
−10
−1
−10−1
IGSS
MRC151
ID = 10 mA
1 mA
0.1 mA
−10−2
0
4
8
12
16
20
VDG (V)
VDS = 15 V.
Fig.10 Drain current as a function of gate-source
voltage; typical values.
ID = 10 mA only for BF556B and BF556C.
Fig.11 Gate current as a function of drain-gate
voltage; typical values.
1996 Jul 29
6
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