NT5DS16M8AW-66 查看數據表（PDF） - Nanya Technology

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生产厂家

NT5DS16M8AW-66

128Mb DDR333/300 SDRAM

Nanya Technology 

NT5DS32M4AT NT5DS32M4AW

NT5DS16M8AT NT5DS16M8AW

128Mb DDR333/300 SDRAM

Absolute Maximum Ratings

Symbol

Parameter

VIN, VOUT

VIN

VDD

VDDQ

Voltage on I/O pins relative to VSS

Voltage on Inputs relative to VSS

Voltage on VDD supply relative to VSS

Voltage on VDDQ supply relative to VSS

TA

TSTG

PD

Operating Temperature (Ambient)

Storage Temperature (Plastic)

Power Dissipation

Rating

−0.5 to VDDQ+ 0.5

−0.5 to +3.6

−0.5 to +3.6

−0.5 to +3.6

0 to +70

−55 to +150

1.0

Units

V

V

V

V

°C

°C

W

IOUT

Short Circuit Output Current

50

mA

Note: Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rat-

ing only, and functional operation of the device at these or any other conditions above those indicated in the operational sections of this speci-

fication is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.

Preliminary

08/01

16

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NANYA TECHNOLOGY CORP. reserves the right to change Products and Specifications without notice.

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