NT5DS16M8AW-66 查看數據表（PDF） - Nanya Technology

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NT5DS16M8AW-66

128Mb DDR333/300 SDRAM

Nanya Technology 

NT5DS32M4AT NT5DS32M4AW

NT5DS16M8AT NT5DS16M8AW

128Mb DDR333/300 SDRAM

DC Electrical Characteristics and Operating Conditions

(0°C ≤ TA ≤ 70°C; VDDQ = 2.5V ± 0.2V, VDD = + 2.5V ± 0.2V, see AC Characteristics)

Symbol

IOHW

IOLW

Parameter

Output Current: Weak Strength Driver

High current (VOUT= VDDQ -0.763V, min VREF, min VTT)

Low current (VOUT= 0.763V, max VREF, max VTT)

Min

− 9.0

9.0

Max

Units

Notes

mA

1

1. Inputs are not recognized as valid until VREF stabilizes.

2. VREF is expected to be equal to 0.5 VDDQ of the transmitting device, and to track variations in the DC level of the same. Peak-to-peak

noise on VREF may not exceed ± 2% of the DC value.

3. VTT is not applied directly to the device. VTT is a system supply for signal termination resistors, is expected to be set equal to VREF, and

must track variations in the DC level of VREF.

4. VID is the magnitude of the difference between the input level on CK and the input level on CK

5. The ratio of the pullup current to the pulldown current is specified for the same temperature and voltage, over the entire tempera-ture and

voltage range, for device drain to source voltages for 0.25 volts to 1.0 volts. For a given output, it represents the maximum difference

between pullup and pulldown drivers due to process variation.

Preliminary

08/01

18

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NANYA TECHNOLOGY CORP. reserves the right to change Products and Specifications without notice.

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