STB75NH02LT4 查看數據表（PDF） - STMicroelectronics

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STB75NH02LT4

N-Channel 24V - 0.0062Ω - 60A - D2PAK STripFET™ III Power MOSFET

STMicroelectronics 

STB75NH02L

Table 6. Source drain diode

Symbol

Parameter

Test conditions

ISD

ISDM

Source-drain current

Source-drain current (pulsed)

VSD(1)

Forward on Voltage

ISD = 30 A, VGS = 0

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD=60 A, di/dt = 100A/µs,

VDD=15 V, TJ=150°C

1. Pulsed: pulse duration = 300µs, duty cycle 1.5%

Min.

Electrical characteristics

Typ.

36

35

3.6

Max. Unit

60

A

240

A

1.3

V

ns

µC

A

5/13

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