BF245A 查看數據表（PDF） - NXP Semiconductors.

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BF245A

N-channel silicon field-effect transistors

NXP Semiconductors. 

NXP Semiconductors

N-channel silicon field-effect transistors

Product specification

BF245A; BF245B; BF245C

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL

VDS

VGDO

VGSO

ID

IG

Ptot

PARAMETER

drain-source voltage

gate-drain voltage

gate-source voltage

drain current

gate current

total power dissipation

Tstg

storage temperature

Tj

operating junction temperature

CONDITIONS

open source

open drain

up to Tamb = 75 C;

up to Tamb = 90 C; note 1

MIN.















65



MAX.

30

30

30

25

10

300

300

+150

150

UNIT

V

V

V

mA

mA

mW

mW

C

C

Note

1. Device mounted on a printed-circuit board, minimum lead length 3 mm, mounting pad for drain lead minimum

10 mm  10 mm.

THERMAL CHARACTERISTICS

SYMBOL

Rth j-a

PARAMETER

thermal resistance from junction to ambient

thermal resistance from junction to ambient

CONDITIONS

in free air

VALUE

250

200

UNIT

K/W

K/W

STATIC CHARACTERISTICS

Tj = 25 C; unless otherwise specified.

SYMBOL

V(BR)GSS

VGSoff

VGS

IDSS

IGSS

PARAMETER

gate-source breakdown voltage

gate-source cut-off voltage

gate-source voltage

BF245A

BF245B

BF245C

drain current

BF245A

BF245B

BF245C

gate cut-off current

CONDITIONS

IG = 1 A; VDS = 0

ID = 10 nA; VDS = 15 V

ID = 200 A; VDS = 15 V

VDS = 15 V; VGS = 0; note 1

VGS = 20 V; VDS = 0

VGS = 20 V; VDS = 0; Tj = 125 C

MIN.

30

0.25

0.4

1.6

3.2

2

6

12





Note

1. Measured under pulse conditions: tp = 300 s;   0.02.

MAX.



8.0

2.2

3.8

7.5

6.5

15

25

5

0.5

UNIT

V

V

V

V

V

mA

mA

mA

nA

A

1996 Jul 30

3

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