BF245A 查看數據表（PDF） - NXP Semiconductors.
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BF245A Datasheet PDF : 13 Pages
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NXP Semiconductors
N-channel silicon field-effect transistors
Product specification
BF245A; BF245B; BF245C
6
handbook, halfpage
Cis
(pF)
4
typ
2
MGE777
1.5
handbook, halfpage
Crs
(pF)
typ
1
MGE781
0
0
−2
−4
−6
−8
−10
VGS (V)
VDS = 20 V; f = 1 MHz; Tamb = 25 C.
Fig.16 Input capacitance as a function of
gate-source voltage; typical values.
0.5
0
−2
−4
−6
−8
−10
VGS (V)
VDS = 20 V; f = 1 MHz; Tamb = 25 C.
Fig.17 Reverse transfer capacitance as a function
of gate-source voltage; typical values.
8
handbook, halfpage
|yfs|
(mA/V)
6
BF245A
BF245B
4
MGE791
BF245C
2
0
0
5
10
15
20
ID (mA)
−10
handbVoGokS, hoafflfpage
at ID = 10 nA
(V) −8
MGE784
−6
−4
BF245C
−2
BF245B
−0 BF245A
0
10
20
30
IDSS at VGS = 0 (mA)
VDS = 15 V; f = 1 kHz; Tamb = 25 C.
Fig.18 Forward transfer admittance as a function of
drain current; typical values.
VDS = 15 V; Tj = 25 C.
Fig.19 Gate-source cut-off voltage as a function of
drain current; typical values.
1996 Jul 30
8
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