GTL2010PW-T 查看數據表（PDF） - Philips Electronics

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GTL2010PW-T

Bi-directional low voltage translators

Philips Electronics 

0 0.25 0.5 0.75

0.0E+00

-2.0E-03

-4.0E-03

-6.0E-03

-8.0E-03

VDDref = 5.0v

VDDpass = 3.3v

RDn = 150 ohms

RDref = 200k

-1.0E-02

-1.2E-02

-1.4E-02

-1.6E-02

-1.8E-02

-2.0E-02

-2.2E-02

1 1.25 1.5 1.75

VSn (V)

VSref = 2.5v

2 2.25 2.5

25 deg C

85 deg C

-40 deg C

Figure 13. V-I Electrical Characteristics at VSREF = 2.5 Volt and VDDREF = 5.0 Volt

Figures 11, 12 and 13 show the SREF at 2.5 V with VDDREF voltages of 3.3 V, 4.0 V, and 5.0 V respectively. Note that

when VDDREF is 3.3 V, with only 0.8 V between VDDREF and the SREF voltage, the cold temperature curve turns off

before the source voltage reaches the SREF voltage. With VDDREF voltages of 4.0 V and 5.0 V, the behavior returns to

normal where the turn off point is the SREF voltage, independent of temperature. The same pass transistor at hot

temperatures has a higher on resistance so it starts to shut off sooner as the source voltage approaches the SREF voltage.

CBT Like Electrical characteristics

CBT like characteristics are tested using a setup as shown in Figure 14.

m

Figure 14 – CBT like Test Set Up

Figure 15 shows typical pass transistor on resistance (RON) as a function of source voltage with the gate at 5 V and

Isource = 64 mA, Figure 16 shows RON with Isource = 15 mA. As can be clearly seen in these figures, the RON changes only

slightly as long as the source voltage is less than the gate to source voltage necessary to conduct an Idsat equal to the

current source current (64 mA for Figure 15 and 15 mA for Figure 16). The RON increases rapidly as the transistor is

unable to conduct the high current. CBT functions are generally used with dynamic currents rather than static currents.

11

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