BF1210 查看數據表（PDF） - Philips Electronics

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BF1210

Dual N-channel dual gate MOSFET

Philips Electronics 

NXP Semiconductors

BF1210

Dual N-channel dual gate MOSFET

Table 8. Dynamic characteristics for amplifier A …continued

Common source; Tamb = 25 °C; VG2-S = 4 V; VDS(A) = 5 V; ID(A) = 19 mA.

Symbol Parameter

Conditions

Gtr

transducer power gain

NF

noise figure

Xmod cross modulation

BS = BS(opt); BL = BL(opt)

f = 200 MHz; GS = 2 mS; GL = 0.5 mS

f = 400 MHz; GS = 2 mS; GL = 1 mS

f = 800 MHz; GS = 3.3 mS; GL = 1 mS

f = 11 MHz; GS = 20 mS; BS = 0 S

f = 400 MHz; YS = YS(opt)

f = 800 MHz; YS = YS(opt)

input level for k = 1 %; fw = 50 MHz;

funw = 60 MHz

at 0 dB AGC

at 10 dB AGC

at 20 dB AGC

at 40 dB AGC

[1] Calculated from S-parameters.

[2] Measured in Figure 32 test circuit.

Min Typ Max Unit

[1]

31

27

22

-

-

-

[2]

35 39 dB

31 35 dB

26 30 dB

3

-

dB

0.9 1.5 dB

1.2 1.9 dB

90 -

-

-

90 -

-

99 -

100 105 -

dBµV

dBµV

dBµV

dBµV

BF1210_1

Product data sheet

Rev. 01 — 25 October 2006

© NXP B.V. 2006. All rights reserved.

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