MF1011B900 查看數據表（PDF） - Philips Electronics

零件编号

产品描述 (功能)

生产厂家

MF1011B900

Microwave power transistor

Philips Electronics 

Philips Semiconductors

Microwave power transistor

Product specification

MF1011B900Y

handbook, full pagewidth

40

30

30

18.5

4.0 7.5

7.5 1.6 4.0 10.0 1.0 5.9

20.0

0.64

5.0 21.0

10.5

40

0.64

input

Dimensions in mm.

Substrate: Epsilam 10.

Thickness: 0.635 mm.

Permittivity: εr = 10.

1997 Feb 18

C4

L1

L2

C6

VCC

C5

C2

C3

R/L3

C1

output

C7

MLC720

Fig.3 Broadband test circuit.

5

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