MF1011B900 查看數據表（PDF） - Philips Electronics
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MF1011B900 Datasheet PDF : 12 Pages
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Philips Semiconductors
Microwave power transistor
Product specification
MF1011B900Y
List of components (see Fig.3)
COMPONENT
C1
C2,C3
C4
C5
C6, C7
L1, L2
L3
R
DESCRIPTION
capacitor
tantalum capacitor
electrolytic capacitor
feedthrough bypass capacitor
variable gigatrim capacitor
0.65 mm copper wire; total length = 26 mm;
height of loop = 10 mm
4 turns 0.65 mm copper wire;
total length = 48 mm
resistor
VALUE
100 pF
10 µF; 50 V
1 mF; 63 V
0.8 to 8 pF
4.7 Ω; 0.5 W
ORDERING INFORMATION
ATC 100A101kp50x
Erie 1250-003
Tekelec 729-1
1000
handbook, halfpage
PL
(W)
800
MLC722
600
400
200
0
0
50
100
150
200
250
Pi (W)
Class C pulse operation.
tp = 10 µs; δ = 1%; VCC = 50 V; f = 1.09 GHz.
In broadband test circuit as shown in Fig.3.
Fig.4 Load power as a function of input power.
handbook,6h0alfpage
ηc
(%)
40
MLC723
20
0
0
50
100
150
200
250
Pi (W)
Class C pulse operation.
tp = 10 µs; δ = 1%; VCC = 50 V; f = 1.09 GHz.
In broadband test circuit as shown in Fig.3.
Fig.5 Collector efficiency as a function of
input power.
1997 Feb 18
6
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