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MF1011B900 查看數據表(PDF) - Philips Electronics
零件编号
产品描述 (功能)
生产厂家
MF1011B900
Microwave power transistor
Philips Electronics
MF1011B900 Datasheet PDF : 12 Pages
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Philips Semiconductors
Microwave power transistor
Input and optimum load impedances
V
CE
= 50 V; typical values at P
L
= P
L1
(see Figs 6 and 7).
f
Z
i
(GHz)
(
Ω
)
1.03
0.22 + j0.19
1.09
0.23 + j0.12
1.15
0.19 + j0.06
handbook, full pagewidth
1
0.5
2
Product specification
MF1011B900Y
Z
L
(
Ω
)
0.14
−
j0.10
0.12
−
j0.08
0.09
−
j0.09
0.2
1.03 GHz
Zi
+j
1.09 GHz
0
1.15 GHz 0.2
0.5
–j
0.2
5
10
2
5 10
∞
10
5
0.5
1
V
CC
= 50 V; Z
o
= 10
Ω
; P
o
= 240 W.
2
MLC724
Fig.6 Input impedance as a function of frequency.
1997 Feb 18
7
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