SUB65P06-20 查看數據表（PDF） - Vishay Semiconductors
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SUB65P06-20 Datasheet PDF : 4 Pages
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SUP/SUB65P06-20
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Junction Temperature
2.5
100
VGS = 10 V
ID = 30 A
2.0
Source-Drain Diode Forward Voltage
TJ = 150_C
1.5
TJ = 25_C
10
1.0
0.5
0.0
–50 –25 0
25 50 75 100 125 150 175
TJ – Junction Temperature (_C)
THERMAL RATINGS
Maximum Avalanche and Drain Current
vs. Case Temperature
80
60
40
20
1
0.3
0.3
0.6
0.9
1.2
1.5
VSD – Source-to-Drain Voltage (V)
Safe Operating Area
500
100
Limited by rDS(on)
10
1
TC = 25_C
Single Pulse
10 ms
100 ms
1 ms
10 ms
100 ms
dc
0
0
25 50 75 100 125 150 175
TC – Case Temperature (_C)
0.1
0.1
1
10
100
VDS – Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Case
2
1 Duty Cycle = 0.5
0.2
0.1
0.1 0.05
0.02
0.01
10–5
Single Pulse
10–4
www.vishay.com S FaxBack 408-970-5600
2-4
10–3
10–2
Square Wave Pulse Duration (sec)
10–1
1
3
Document Number: 70289
S-05111—Rev. C, 10-Dec-01
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