TGA2513-SM 查看數據表（PDF） - TriQuint Semiconductor

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TGA2513-SM

2-20 GHz LNA/Gain Block

TriQuint Semiconductor 

Advance Product Information

July 26, 2007

TGA2513-SM

Recommended Board Layout Assembly

1uF 1206

capacitor

5 ohm 0603

resistor

100pF 0402

capacitor

Recommended Bias-up Procedure

1. Ensure no RF power is applied to the device

2. Pinch-off device by setting Vg (Vg1) to -1V

3. Increase Vd to 5V while monitoring gate current

4. Increase Vc (Vg2) to 2V

5. Increase Vg (Vg1) until drain current reaches 75 mA

6. Apply RF Power

Recommended Bias-Down Procedure

1. Turn off RF power

2. Decrease Vg (Vg1) to -1V

3. Decrease Vc (Vg2) to 0 V

4. Decrease Vd to 0 V

GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should

be observed during handling, assembly and test.

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TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com

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