FCP22N60N 查看數據表（PDF） - Fairchild Semiconductor
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FCP22N60N Datasheet PDF : 11 Pages
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Typical Performance Characteristics
Figure 1. On-Region Characteristics
100
*Notes:
1. 250μs Pulse Test
2. TC = 25oC
10
VGS = 15.0 V
10.0 V
8.0 V
7.0 V
6.0 V
5.0 V
1
4.0 V
0.1
0.3
1
10
VDS,Drain-Source Voltage[V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
0.4
Figure 2. Transfer Characteristics
100
150oC
-55oC
10
25oC
*Notes:
1. VDS = 20V
2. 250μs Pulse Test
1
2
3
4
5
6
7
8
VGS,Gate-Source Voltage[V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
100
0.3
VGS = 10V
0.2
0.1
0
VGS = 20V
*Note: TC = 25oC
10
20
30
40
50
60
ID, Drain Current [A]
Figure 5. Capacitance Characteristics
1E5
10000
Coss
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
Ciss
1000
Crss
100
10
*Note:
1. VGS = 0V
2. f = 1MHz
1
0.1
1
10
100
600
VDS, Drain-Source Voltage [V]
150oC
10
25oC
*Notes:
1. VGS = 0V
1
2. 250μs Pulse Test
0.0
0.5
1.0
1.5
VSD, Body Diode Forward Voltage [V]
Figure 6. Gate Charge Characteristics
10
VDS = 120V
8
VDS = 300V
VDS = 480V
6
4
2
0
*Note: ID = 11A
0
10
20
30
40
50
Qg, Total Gate Charge [nC]
©2009 Fairchild Semiconductor Corporation
3
FCP22N60N / FCPF22N60NT Rev. C1
www.fairchildsemi.com
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