BUT12 查看數據表（PDF） - Philips Electronics

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BUT12

Silicon diffused power transistors

Philips Electronics 

Philips Semiconductors

Silicon diffused power transistors

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL

PARAMETER

CONDITIONS

VCESM

VCEO

ICsat

IC

ICM

IB

IBM

Ptot

Tstg

Tj

collector-emitter peak voltage

BUT12

BUT12A

collector-emitter voltage

BUT12

BUT12A

collector saturation current

BUT12

BUT12A

collector current (DC)

collector current (peak value)

base current (DC)

base current (peak value)

total power dissipation

storage temperature

junction temperature

VBE = 0

open base

see Figs 3 and 4

see Fig. 4

Tmb ≤ 25 °C; see Fig.2

Product specification

BUT12; BUT12A

MIN.

MAX.

UNIT

−

850

V

−

1 000

V

−

400

V

−

450

V

−

6

A

−

5

A

−

8

A

−

20

A

−

4

A

−

6

A

−

125

W

−65

+150

°C

−

150

°C

handbook1,2h0alfpage

Ptot max

(%)

80

MGD283

40

0

0

50

100 Tmb (oC) 150

Fig.2 Power derating curve.

10

handbook, halfpage

IC

(A)

5

MGB892

BUT12F

BUT12AF

0

0

400

800 VCE (V) 1200

VBE = −1 to −5 V; Tc = 100 °C.

Fig.3 Reverse bias SOAR.

1997 Aug 13

2

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