UT52L1616 查看數據表（PDF） - Utron Technology Inc

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UT52L1616

1M X 16 BIT SDRAM

Utron Technology Inc 



UTRON

Preliminary Rev. 0.91

UT52L1616

1M X 16 BIT SDRAM

DEVICE OPERATION

Power Up Sequence

Apply power and start clock, attempt to maintain CKE= “H”, DQM= “H”. Other pins are NOP condition at their

inputs.

Maintain stable power, stable clock and NOP input condition for a minimum of 200us.

Initialization Sequence

After the following initialization sequence, the device is ready for full functionality:

Precharge both banks.

Issue 2 or more Auto refresh (REF) commands to the device.

Issue a mode register set (MRS) command to set the device mode of operation.

After tMRD0 (3 clocks) is met. The device is ready for operation.

** Step 2 and 3 are interchangeable.

Precharge Select bank (PRE)

The precharge operation will be performed on the active bank when the precharge selected bank command is

issued. When the precharge command is issued with address A10 low, A11 selects the bank to be precharged. At

the end of the precharge selected bank command the selected bank will be in idle state after the minimum tRP is

met.

Precharge All (PALL)

Both banks are precharged at the same time when this command is issued. When the precharge command is

issued with address A10 high then all banks will be precharged. At the end of the precharge all command both

banks will be in idle state after the minimum tRP is met.

Auto Precharge

AUTO PRECHARGE is a feature which performs the same individual-bank PRECHARGE function described

above, but without requiring an explicit command. This is accomplished by using A10 to enable AUTO

PRECHARGE in conjunction with a specific READ or WRITE command. A precharge of the bank/row that is

addressed with the READ or WRITE command is automatically performed upon completion of the READ or

WRITE burst, except in the full-page burst mode, where AUTO PRECHARGE does not apply. AUTO

PRECHARGE is nonpersistent in that it is either enabled or disabled for each individual READ or WRITE

command. AUTO PRECHARGE ensures that the PRECHARGE is initiated at the earliest valid stage within a

burst. The user must not issue another command to the same bank until the precharge time (tRP) is completed.

This is determined as if an explicit PRECHARGE command was issued at the earliest possible time, as described

for each burst type in the Operation section of this data sheet.

Burst Terminate

The BURST TERMINATE command is used to truncate either fixed-length or full-page bursts. The most recently

registered READ or WEITE command prior to the BURST TERMINATE command will be truncated as shown in

the Operation section of this data sheet.

NOP and Device Deselect (NOP, DESL)

The device is deselected by deactivating the CE signal. In this mode the device ignores all the control inputs.

The SDRAMs are put in NOP mode when CE is active and by deactivating, RAS , CAS and WE . For both

Deselect and NOP the device will finish the current operation when this command is issued.

UTRON TECHNOLOGY INC.

1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C.

TEL: 886-3-5777882 FAX: 886-3-5777919

11

P90004

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