SGH13N60UFD 查看數據表（PDF） - Fairchild Semiconductor
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SGH13N60UFD Datasheet PDF : 8 Pages
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SGH13N60UFD
N-CHANNEL IGBT
ELECTRICAL CHARACTERISTICS (IGBT PART)
(Tc=25°C,Unless Otherwise Specified)
Symbol Characteristics
Test Conditions
BVCES
∆VCES/
∆TJ
VGE(th)
ICES
IGES
VCE(sat)
Cies
Coes
Cres
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Qg
Qge
Qgc
Le
C - E Breakdown Voltage
Temperature Coeff. of
Breakdown Voltage
G - E threshold voltage
Collector cutoff Current
G - E leakage Current
Collector to Emitter
saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn on delay time
Turn on rise time
Turn off delay time
Turn off fall time
Turn on Switching Loss
Turn off Switching Loss
Total Switching Loss
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
Internal Emitter Inductance
VGE = 0V , IC = 250uA
VGE = 0V , IC = 1mA
IC = 6.5mA , VCE = VGE
VCE = VCES , VGE = 0V
VGE = VGES , VCE = 0V
Ic=6.5A, VGE = 15V
Ic=13A, VGE = 15V
VGE = 0V , f = 1MHz
VCE = 30V
VCC = 300V , IC = 6.5A
VGE = 15V
RG = 50Ω
Inductive Load
Vcc = 300V
VGE = 15V
Ic = 6.5A
Measured 5mm from PKG
Min Typ Max Units
600 -
-
- 0.6 -
V
V/°C
4.0 5.5 7.5
V
-
- 250 uA
-
- 100 nA
- 1.95 2.6
V
- 2.6 -
V
- 375 -
pF
-
63
-
pF
-
13
-
pF
-
15
-
nS
-
26
-
nS
-
50 80
nS
- 110 220 nS
- 0.1 -
mJ
- 0.1 -
mJ
- 0.2 0.3 mJ
-
25 37
nC
-
7 11
nC
-
8 12
nC
-
14
-
nH
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